How does temperature affect the gain of a silicon photomultiplier?

From the Hamamatsu August 2018 NEWSLETTER

Figure 4
Fig 4. Courtesy Hamamatsu Corporation

Bridgewater, NJ, USA — Many applications require the stability of a photodetector’s gain with respect to temperature changes.

Here’s a technical note from Hamamatsu that discusses the origin of the gain-temperature dependence in a silicon photomultiplier (SiPM) and methods to correct for it.

Download the tech note “How does temperature affect the gain of an SiPM?” by Slawomir Piatek, PhD, (Hamamatsu Corporation & New Jersey Institute of Technology) online at: https://hub.hamamatsu.com/sp/hc/resources/Temperature_Gain_SiPM.pdf.

But, if it is no longer online, we have archived a copy in our database here: Temperature_Gain_SiPM

Hamamatsu Corporation
360 Foothill Road
Bridgewater, NJ 08807
USA

Tel: +1 (800) 524-0504
Email: photonics@hamamatsu.com

Website: https://www.hamamatsu.com/jp/en/index.html

Ed. NOTE:

Hamamatsu provides many technical support features on their website, in addition to cataloging their products. Below are listed some of the other featured articles that deal with silicon photodiodes and more…